5 Works
Model for the formation of GaAs-Au axial nanowire heterostructures under flash lamp annealing
Vladimir G. Dubrovskii
Semiconductor-metal nanowire heterostructures have attracted a particular interest over the last decade. However, they often suffer from low interface and crystalline quality. Here, we present a model for the formation of GaAs-Au axial nanowire heterostructures from GaAs/Au core-shell nanowires encapsulated into SiO2 under flash lamp annealing, as described in the previous work. The model reveals the basic mechanism and establishes the main control parameters of the process which enable high quality GaAs-Au heterostructures. It can...
Polycrystalline films of phosphors Cd(1-x-y-z) (CuyAgz) ZnxS on the silicon substrate with the silicon carbide buffer layer: structure and properties
N.M. Sergeeva, S.P. Bogdanov & A.V. Redkov
Polycrystalline phosphor film Cd(1-x-y-z) (CuyAgz) ZnxS was grown on the surface of the Si/nano-SiC heterostructure obtained by the unique method of substitution of atoms. The structural, phonon (vibrational) properties of the film, as well as its morphology were studied. X-ray phase analysis (XRD) showed that the phase composition is represented by a matrix of solid solution of cubic syngony and impurity phases formed during precipitation: sodium sulfate (Na2SO4) of orthorhombic syngony and sodium cadmium sulfide...
Axial misfit stress relaxation in core-shell nanowires with hexagonal core via nucleation of rectangular prismatic dislocation loops
S.A. Krasnitckii, A.M. Smirnov, K.D. Mynbaev, L.V. Zhigilei & M.Yu. Gutkin
A theoretical model of axial misfit stress relaxation in core-shell nanowires with
hexagonal cross section of the core through the nucleation of prismatic dislocation loops is
suggested. Different nucleation sites of the loops in core-shell nanowires are considered. The
energy change caused by the loop nucleation is calculated. The critical condition for the onset
of the loops is given and analyzed in detail. The most favorable sites in nanowires and the
optimal loop shape are...
Structural characterization of bulk (AlXGa1-X)2O3 crystals grown by the Czochralski method
A.V. Kremleva, D.A. Kirilenko, I.G. Smirnova, V.E. Bougrov & A.E. Romanov
Results of structural characterization of (AlxGa1-x)2O3 single crystals grown from
the melt with Al content x up to 0.04 are presented. Bulk (AlxGa1-x)2O3 crystals were grown
by exploring the Czochralski method [1]. Transmission electron microscopy (TEM) was used
to investigate defect structure of the material with various composition, X-ray diffractometry
was used to measure Al content x, to inspect crystallography of the growth facets and to
characterize the structure quality of the samples. Possible types...
Czochralski grown (AlxGa1-x)2O3 crystals with variable Al content
P.N. Butenko, D.I. Panov, A.V. Kremleva, D.A. Zakgeim, A.V. Nashchekin, I.G. Smirnova, D.A. Bauman, A.E. Romanov & V.E. Bougrov
We propose a technuque of liquid-phase growth of (AlxGa1-x)2O3 crystals with
variable and controlled Al content in them. When using the Czochralski growth process
Ga2O3 melt was dosed by sapphire seed. By applying of the special growth zone and the
regulating the process parameters, a series of crystal samples with Al content varying from
0.51 to 4.68 % at. was obtained. In addition to the standard setting of the geometry and weight
of the crystals...