Electron-spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

M. Römer, H. Bernien, G. Müller, D. Schuh, Jens Hübner & Michael Oestreich
We have measured the electron-spin-relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 and 80 K and for doping concentrations ranging from 2.7×1015 to 8.8×1016 cm−3 using spin noise spectroscopy. The temperature-dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confirm mainly free electrons at all temperatures for the highest doped sample. While the sample at the metal-to-insulator transition shows the...
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