Robust In-Zn-O Thin-Film Transistors with a Bilayer Heterostructure Design and a Low-Temperature Fabrication Process Using Vacuum and Solution Deposited Layers.

Sang Yun Bang, Felix C Mocanu, Tae Hoon Lee, Jiajie Yang, Shijie Zhan, Sung-Min Jung, Dong-Wook Shin, Yo-Han Suh, Xiang-Bing Fan, Sanghyo Lee, Hyung Woo Choi, Luigi Occhipinti, SooDeok Han & Jong Min Kim
We report on the design, fabrication, and characterisation of heterostructure In-Zn-O (IZO) thin-film transistors (TFTs) with improved performance characteristics and robust operation. The heterostructure layer is fabricated by stacking a solution processed IZO film on top of a buffer layer which is deposited previously using an electron beam (e-beam) evaporator. A thin buffer layer at the dielectric interface can help to template the structure of the channel. Control of the precursors, and of the solvent...
This data repository is not currently reporting usage information. For information on how your repository can submit usage information, please see our documentation.