Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

Vinod K. Sangwan, Hong-Sub Lee, Hadallia Bergeron, Itamar Balla, Megan Beck, Kan-Sheng Chen & Mark C. Hersam
Data corresponds to the demonstration of the first memtransistor on monolayer MoS2. Polycrystalline monolayer MoS2 was grown by chemical vapor deposition with grain sizes of 3-5 microns. Memtransistor devices were fabricated on Si substrates coated with 300 nm thermal oxide by following custom-made photolithography and reactive ion etching recipes. Characterization of the devices using atomic force microscopy, electrostatic force microscopy, and cryogenic measurement revealed switching mechanism governed by a dynamically tunable Schottky barrier at contact....
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