HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

S.I. Stepanov, V.I. Nikolaev, A.V. Almaev, A.I. Pechnikov, M.P. Scheglov, A.V. Chikiryaka, B.O. Kushnarev & A.Y. Polyakov
Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2O3 buffer layers resulted in phase-pure α-Ga2O3 films and a fourfold reduction of the dislocation density to 5∙109 cm-2.
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