Energy resolved measurements of the phonon ionization of D and A+ centers in silicon with superconducting Al tunnel junctions

Wilfried Burger & Kurt Lassmann
By means of phonon spectroscopy with superconducting-Al tunnel junctions as tunable phonon generators we show that the threshold energy of the phonon-induced conductivity for Si: B+ and Si: P- agrees well with far-infrared data, proving that the ionization is mainly a one-phonon process. This ionization mechanism allows a sensitive detection of very-high-frequency phonons.
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