8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs

Volker Hurm, Josef Rosenzweig, Manfred Ludwig, Willi Benz, Manfred Berroth, Axel Hülsmann, Gudrun Kaufel, Klaus Köhler, Brian Raynor & Joachim Schneider
An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpedance amplifier, and a 50 Omega output buffer has been fabricated using an enhancement/depletion 0.5 μm recessed-gate AlGaAs/GaAs HEMT process. Successful operation at data rates up to 10 Gbit/s has been demonstrated.
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