14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver

Volker Hurm, Manfred Ludwig, Josef Rosenzweig, Willi Benz, Manfred Berroth, Roland Bosch, Wolfgang Bronner, Axel Hülsmann, Klaus Köhler, Brian Raynor & Joachim Schneider
A monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifer has been fabricated using an enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs HEMT process. The band-width of 14.3 GHz implies suitability for transmission rates of up 20 Gbit/s. The transimpendance is 670 Ω (into 50 Ω) and the projected sensitivity is 16.4 dBm (BER = 10 -9).
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