Simulation of a Chemical Vapor Deposition

Jürgen Geiser & M. Arab
We are motivated to model chemical vapor deposition for metallic bipolar plates and optimization to deposit a homogeneous layer. Moreover a constraint to the deposition process is a very low pressure (nearly vacuum) and a low temperature (about 400 K). These constraints need to have a catalyst process, here in our apparatus we deal with a plasma source and precursor gases. Such a plasma have the advantage to accelerate the vaporation process and to bring...
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