MECHANISM OF MOLECULE MIGRATION OF CARBON AND SILICON MONOXIDES IN SILICON CARBIDE CRYSTAL

S.A. Kukushkin, A.V. Osipov & E.V. Osipova
The main processes occurring during the migration of molecules of carbon monoxide CO and silicon monoxide SiO gases through a layer of monocrystalline silicon carbide SiC of a cubic polytype have been described by the ab initio methods. This problem arises when a single-crystal SiC layer is grown by the method of coordinated substitution of atoms due to the chemical reaction of a crystalline silicon substrate with the CO gas. The reaction products are epitaxial...
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