Structural characterization of bulk (AlXGa1-X)2O3 crystals grown by the Czochralski method

A.V. Kremleva, D.A. Kirilenko, I.G. Smirnova, V.E. Bougrov & A.E. Romanov
Results of structural characterization of (AlxGa1-x)2O3 single crystals grown from the melt with Al content x up to 0.04 are presented. Bulk (AlxGa1-x)2O3 crystals were grown by exploring the Czochralski method [1]. Transmission electron microscopy (TEM) was used to investigate defect structure of the material with various composition, X-ray diffractometry was used to measure Al content x, to inspect crystallography of the growth facets and to characterize the structure quality of the samples. Possible types...
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