Points quantiques sur substrat d'indium phosphure: Plate-forme pour des composantes optoélectroniques accordables

Claudine Allen
InAs/InGaAsP quantum dots were embedded in laser diode structures grown on (100) InP and tunable lasing has been observed between 1.5 mum and 1.7 mum. We first investigated the dynamics of charge carriers and photons in these laser diodes. It was found that the carriers confined in the quantum dots have discrete energy states like those of a bidimensional harmonic oscillator. The interaction between charge carriers and electromagnetic waves was analyzed through the electrical susceptibility....
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