Dilute nitride long wavelength semiconductor diode lasers

Xia Zhang
This thesis studies the novel dilute nitride semiconductor materials, GaInNAs and GalnNAsSb, and their usage in GaAs-based diode lasers emitting between 1.25 to 1.55 mum in wavelength. This work covers material physical modeling, laser simulations, design and the experimental work of device characterization. The tabulated band anti-crossing theory of the quaternary GaInNAs is formulated. The resulting formulas are further corrected by our experimental observations. This modified band anti-crossing theory is implemented into the commercial laser...
This data repository is not currently reporting usage information. For information on how your repository can submit usage information, please see our documentation.