Replication Data for: Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-Volatile Memories

Solanki Ankur, Antonio Guerrero, Zhang Qiannan, Juan Bisquert & Sum Tze Chien
Ion migration, one origin of current–voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen–Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/OFF ratio of RPP-based devices is strongly dependent on the layers and peaks at n̅ = 5, demonstrating the highest ON/OFF ratio of ∼104 and minimal operation voltage in 1.0 mm2 devices. Long data retention even in...
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