Optical study of rare earth ion and transition metal impurities in nitrides

Jayanta Mishra
Europium (Eu) and other rare earth ions along with some transition metals doped in nitride semiconductors have been investigated by photoluminescence measurement. Eu has been found to be the most efficient light emitting dopants. Eu was implanted on several host materials (undoped GaN, Mg-doped GaN, u-AlGaN, Mg-doped AlGaN, AlN). We propose a new method to distinguish optically active centers of Eu in Eu-implanted Mg-doped GaN. Two different types of optically active Eu centers in Mg-doped...
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