Deformation of indium oxide nanostructures, The

Stephanie Gomez, Mukesh Kumar & Corrine E. Packard
The development of nanowire technology is important for the application of small and compact devices to replace bulk material and has been a subject of great interest due to their potential in advancing field effect transistors. Nanowires are better for transistor devices because they are a single crystal grown from the bottom-up approach and thus allowing for a controlled gate length. Understanding the mechanical properties will determine the reliability of the nanowire devices.
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