Selector-less resistive random access memory (RRAM) with intrinsic nonlinearity for crossbar array applications

Ying-Chen Chen
With increasing demand for high-density memory applications, alternative memory technology has been intensively investigated for replacing conventional charge-based flash memory. Among the emerging memory technology, resistive random-access memory (RRAM) device holds great potential as an emerging candidate because of its simple design, high-speed operation, excellent scalability and low power consumption. However, the sneak path current (I [subscript sneak]) through unselected neighboring cells is a major problem in crossbar RRAM array configuration, which significantly affects the...
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