Mask synthesis techniques for directed self-assembly

Joydeep Mitra
Semiconductor patterning technologies based on the current generation of 193 nm immersion lithography can no longer sustain advanced process nodes beyond 10 nm. Hence, the adoption of next generation patterning techniques such as Extreme Ultra Violet Lithography (EUVL) and Directed Self Assembly (DSA) has become a necessity. Though there have been great strides in materials development for DSA with high χ materials enabling up to 5 nm pitches, DSA still lacks the Electronic Design Automation...
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