Data from: InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

Xiao Meng, Shiyu Xie, Xinxin Zhou, Niccolò Calandri, Mirko Sanzaro, Alberto Tosi, Chee Hing Tan & Jo Shien Ng
A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K−1. Operating at 210 K and in a gated mode, the SPAD achieved...
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