1.5.4 Influence of a Changing Gate Bias on the Sensing Properties of SiC Field Effect Gas Sensors

Christian Bur, Manuel Bastuck, Andreas Schütze, Mike Andersson & Anita Lloyd Spetz
Field effect transistors based on silicon carbide have previously been used with temperature cycled operation to enhance the selectivity. In this study the influence of a changing gate bias on the sensing properties of a platinum gate FET has been studied in order to extend the virtual multi-sensor approach. The sensor exhibits gas specific hysteresis when changing the gate bias indicating that additional information regarding selectivity is contained in the transient behavior. Measurements also showed...