3.5.2 FluorinatedHfO2 ISFET as pK sensor with highly sensitivity

Tseng-Fu Lu, Kuan-I Ho, Chia-Ming Yang, Jer-Chyi Wang, Chao-Sung Lai, Dorota G. Pijanowska, Bohdan Jaroszewicz & Michal Zaborowski
Ion Sensitive Field-Effect Transistor (ISFET)-based sensors with fluorinated-hafnium oxide (HfO2) thin film fabricated by atomic layer deposition (ALD) and thermal carbon tetrafluoride (CF4) plasma posttreatment was investigated for pK detection. The developed fluorinated-HfO2 ISFET is highly sensitive to K +ions (59.5 mV/pK) in the concentration range between 0.01 and 100 mM. When compared to the same structure without plasma treatment, the sensitivity was improved by fourteenfold.