5.3.1 High-precise transient response model of semiconductor gas sensor considering temperature dependency of carrier mobility

A. Fujimoto, M. Kita & Y. Katoh
The model of transient response of SnO2 semiconductor gas sensor under modulation heating has been constructed and improved successfully to reveal the forming process of the transient response. The transient responses were estimated by carrier concentrations determined from oxygen concentrations calculated by the model. The model made clear that activation energy of the chemical reaction affected strongly to the transient response of the sensor. Calculated transient responses using activation energies determined by molecular orbital calculations...