P1.0.2 Hydrogen Gas Sensor Based on β-Ga2O3 Thin Film with a Function of Self Temperature Compensation

Shinji Nakagomi, Tsubasa Sai & Yoshihiro Kokubun
Field effect Hydrogen gas sensor devices based on beta-Ga2O3 thin films with a function of temperature compensation were fabricated. beta-Ga2O3 thin films were deposited on sapphire substrate by gallium evaporation in oxygen plasma. Resistance between two ohmic electrodes on beta-Ga2O3 thin film with Pt gate was decreased in H2 ambient. The sensor can detect 100ppm H2 under 20%O2 at 400°C. The resistance of the device without gate little changes for an ambient variation. By connecting...