P2.0.1 Investigations of dielectric and semiconductor oxides obtained by Atomic Layer Deposition method for transparent electronic sensor devices

S. Gieraltowska, L. Wachnicki, B. S. Witkowski, E. Guziewicz & M. Godlewski
We have obtained the transparent structures on glass and quartz with all oxide elements deposited by the Atomic Layer Deposition (ALD) technique. Use of ALD is an important factor for sensor device manufacturing, because of simplicity and low costs of fabrication. Our work was focused on the optimization of deposition parameters of composite dielectric layers consisting of Al2O3, HfO2, ZrO2 and of ZnO semiconductor layers. These layers were then used for construction of transparent thin...