P2.4.18 MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications

Z. R. Zytkiewicz, M. Sobanska, K. Klosek, A. Reszka, A. Wierzbicka, R. Kruszka, K. Golaszewska, M. Setkiewicz & T. Pustelny
GaN nanowires (NWs) were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy (PAMBE). The NWs nucleated spontaneously, no catalyst was used for their growth. SEM studies show that the NWs are homogenously distributed and well aligned with the c-axis being perpendicular to the substrate, while TEM analysis reveals their high crystalline quality. No GaN wetting layer between NWs was detected. Two types of NWs-based gas sensors were prepared. Our preliminary tests in NO2, NH3...