P2.8.1 Single crystal GaN/AlN/Si (1 1 1) Papered via PA-MBE for Hydrogen Gas Sensor Application

Asmiet Ramizy & Z. Hassan
The growth of heterostructure of n-type GaN/AlN/Si (1 1 1) is carried out using the molecular beam epitaxy (MBE) Veeco model Gen II system. The surface morphology of the as-grown GaN sample showed a high quality single crystal of GaN epilayer. The PL spectrum showed a strong emission and a sharp peak located at 364.5 nm (3.40 eV ), which is attributed to the band edge emission of GaN. Raman spectra also displayed a strong...