1.1 - InAS/GaSb Superlattices for High-Performance Infrared Detection

F. Rutz, R. Rehm, J. Schmitz, M. Wauro, J. Niemasz, J.-M. Masur, A. Wörl, M. Walther, R. Scheibner, J. Wendler & J. Ziegler
Photodiodes based on InAs/GaSb short-period superlattices (SLs) have proven their great potential for high-performance infrared (IR) detectors. These heterostructures are characterized by a broken band gap type-II band alignment leading to spatially indirect transitions between hole states localized in the GaSb layers and delocalized electronic states in the InAs layers. A high effective electron mass results in low tunneling currents and a low Auger recombination rate compared to CdHgTe detectors. The quantum efficiency of InAs/GaSb...