B3.1 - Novel Silicon High Pressure Sensing Element

Patrik Heinickel & Roland Werthschuetzky
This paper presents a working principle for a novel piezoresistive high-pressure sensing element for nominal pressure that amounts from 50 MPa to 500 MPa. The novel overload protected sensing element is made of a solid body silicon chip with implanted piezoresistive resistors. A solid body glass substrate is connected to the silicon chip by holohedral anodic bonding. The operating mode of the novel composite element is based on mechanical strain of the silicon chip and...