P3.1 - Silicon Diode Temperature Sensor Weakly Sensitive to Magnetic Field

V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts & I. A. Rudney
At low temperatures, usual diode temperature sensors on the base of silicon are strongly subjected to influence of magnetic fields. The reason is a freezing-out of free current carriers in the diode base that results in hopping conduction via impurities which depends strongly on magnetic field. But if the diode base is doped up to metallic conductivity the freezing-out of free carriers at low temperatures does not occur and the diode resistance is determined completely...