P6.7 - High Temperature Stable Piezoelectric, Barrier and Insulation Coatings for Sensor Applications

H. Bartzsch, P. Frach, D. Glöß & M. Gitter
The paper presents AlN, Al2O3, SiO2 and Si3N4 films deposited by reactive magnetron sputtering at high deposition rates of 200nm/min. The deposited AlN films show a strong c-axis orientation and a piezoelectric coefficient d33 of 7pm/V. Al2O3, SiO2 and Si3N4 films and their combinations are excellent insulation films on both metal and silicon substrates. High insulation strength of up to 1000V was measured at room temperature and at high temperatures of 400°C. These films perform...