1.1.3 Al-doped TiO2 semiconductor gas sensor for NO2-detection at elevated temperatures

Al-doped TiO2 semiconductor layers were investigated as gas sensor for NOx detection at temperatures up to 800°C. Thin sensor layers were deposited by reactive magnetron sputtering technique from the metallic targets of Ti and Al under addition of oxygen onto the alumina substrates which consisted of screen-printed interdigited Ptelectrodes on the front and no heater at the backside. Al-content was adjusted to 6 atm. % in TiO2. The layers were characterized by XRD and SEM...
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