P3.1 - Capacitive field-effect pH sensor based on an electrolyte-ferroelectric-insulatorsemiconductor structure

Vahe Buniatyan, Norayr Martirosyan, Maryam Abouzar, Juergen Schubert, Willi Zander, Michael J. Schoening, Arshak Poghossian & Spartak Gevorgian
Current interest in perovskite and perovskite-related ferroelectric materials is based on their wide range of electrical properties ranging from insulating materials, ionic and/or electronic conductors up to p- and ntype semiconductors and superconductors. Perovskite oxides of the system A1-xAx’BO3-b (A=Pb, Ba, La, Li; A’= Sr, Ca; B = Ti, Ta, Co, Fe, etc.) are used in high density dynamic random access memories (DRAM), non-volatile ferroelectric random access memories (FeRAM), ferroelectric field-effect transistors, voltage-tuneable capacitors (varactors),...
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