CMOS Compatible Plasmonic Refractive Index Sensor based on Heavily Doped Silicon Waveguide

M. O. Faruque, R. Al Mahmud & R. H. Sagor
In this study, a plasmonic refractive index (RI) sensor using heavily n-doped silicon waveguide is designed and numerically simulated using finite element method (FEM). The reported sensor is based on gratings inside a heavily doped silicon waveguide structure instead of a conventional metal-insulator-metal structure. This feature enables the device to overcome the limitations of conventional plasmonic devices like optical losses, polarization management, etc. Besides, it makes the device compatible with Complementary Metal Oxide Semiconductor (CMOS)...
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