Measurements of single-event burn-out of HV power devices for different technology nodes

High-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are susceptible to destructive failure due to terrestrial cosmic radiation (CR). As a consequence, device development has to ensure adequate radiation hardness for every device technology. In order to reduce testing times accelerated irradiation tests at facilities with a nucleon energy spectrum close to the natural terrestrial CR are essential. Infineon has organized irradiation test campaigns on a regular basis. A detailed description of power...
This data repository is not currently reporting usage information. For information on how your repository can submit usage information, please see our documentation.