Design and characterization of highly-efficient GaN-HEMTs for power applications

Richard Reiner
The physical properties of gallium nitride (GaN) and the related AlGaN/GaN heterojunctions are ideally suited for the fabrication of power semiconductor devices. The high electrical breakdown field strength of GaN in combination with high conductivity due to a two-dimensional electron gas by induced polarization enables the development of transistors with high off-state voltages, low on-state resistances and low switching charges. While material quality and process technology are continuously improved, also progress in layout developments is...
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