4 Works

Rotary actuator control based on tensile force elements made of shape memory Cu-Al-Ni crystals when operated in a cyclic mode

A.I. Priadko, S.A. Pulnev, O.O. Kovalev & I.A. Ilin
An actuator design and a function scheme are developed. A control algorithm of a cyclic actuator is considered. We provide experimental results on the control algorithm and the actuator. The actuator operating range is 60°. The actuator sped is ~ 1 degree/second. The actuator operating is stable in any rotation angle in operating range.

Structural characterization of bulk (AlXGa1-X)2O3 crystals grown by the Czochralski method

A.V. Kremleva, D.A. Kirilenko, I.G. Smirnova, V.E. Bougrov & A.E. Romanov
Results of structural characterization of (AlxGa1-x)2O3 single crystals grown from the melt with Al content x up to 0.04 are presented. Bulk (AlxGa1-x)2O3 crystals were grown by exploring the Czochralski method [1]. Transmission electron microscopy (TEM) was used to investigate defect structure of the material with various composition, X-ray diffractometry was used to measure Al content x, to inspect crystallography of the growth facets and to characterize the structure quality of the samples. Possible types...

Axial misfit stress relaxation in core-shell nanowires with hexagonal core via nucleation of rectangular prismatic dislocation loops

S.A. Krasnitckii, A.M. Smirnov, K.D. Mynbaev, L.V. Zhigilei & M.Yu. Gutkin
A theoretical model of axial misfit stress relaxation in core-shell nanowires with hexagonal cross section of the core through the nucleation of prismatic dislocation loops is suggested. Different nucleation sites of the loops in core-shell nanowires are considered. The energy change caused by the loop nucleation is calculated. The critical condition for the onset of the loops is given and analyzed in detail. The most favorable sites in nanowires and the optimal loop shape are...

Czochralski grown (AlxGa1-x)2O3 crystals with variable Al content

P.N. Butenko, D.I. Panov, A.V. Kremleva, D.A. Zakgeim, A.V. Nashchekin, I.G. Smirnova, D.A. Bauman, A.E. Romanov & V.E. Bougrov
We propose a technuque of liquid-phase growth of (AlxGa1-x)2O3 crystals with variable and controlled Al content in them. When using the Czochralski growth process Ga2O3 melt was dosed by sapphire seed. By applying of the special growth zone and the regulating the process parameters, a series of crystal samples with Al content varying from 0.51 to 4.68 % at. was obtained. In addition to the standard setting of the geometry and weight of the crystals...

Registration Year

  • 2019
    4

Resource Types

  • Text
    4

Affiliations

  • Ioffe Institute
    4
  • ITMO University
    3
  • Peter the Great St. Petersburg Polytechnic University
    2
  • University of Virginia
    1
  • Institute of Problems of Mechanical Engineering
    1
  • The Turner Scientific Research Institute for Children's Orthopedics
    1